教育经历

• 2012-09 至 2017-06 麻省理工学院, 材料科学与工程，博士

• 2010-09 至 2012-08 麻省理工学院，材料科学与工程，硕士

• 2006-08 至 2010-07 北京大学，物理学，学士

工作经历

• 2020-12 至今 上海交通大学, 电子信息与电气工程学院, 副教授

• 2018-01 至 2020-11 美国Atanatres公司, 技术总监

• 2017-07 至 2017-12 MIT Microsystems Technologies Laboratory，博士后

研究方向

• Si chips for molecular biology applications, including ultra-high throughput gene synthesis and DNA information storage.

• Novel semiconductor devices for deep learning training acceleration

科研项目

• 国家级青年人才计划, 2020-12至2023-12, 600万元, 在研, 主持

• 美国国立卫生研究院 (NIH), Small Business Innovation Research, Miniaturized Global Coagulation Assay System in Neonatal and Pediatric Settings, 1R43HL140686-01, 2018-02至2019-09, 15万美元, 结题, 主持

• 美国自然科学基金 (NSF), Small Business Innovation Research, A novel shear-based platelet function test (PFT) using 3D MEMS electrodes, 1722200, 2017-07至2018-12, 22.5万美元, 结题, 主持

• Semiconductor Research Corporation, III-V Vertical Nanowire MOSFETs with Band Engineering in the Transport Direction, 2017-01至2019-12, 30万美元, 结题, 参与

• Lam Research, Multigate III-V MOSFETs, 2014-01至2018-12, 32万美元, 结题, 参与

• 美国自然科学基金 (NSF), Superlattice-Source Nanowire FET with Steep Subthreshold Characteristics, 2010-09至2020-08, 140万美元, 结题, 参与

• 国家自然科学基金面上项目，新型陡峭亚阈值斜率器件-超晶格晶体管的设计、制备与表征，2022-01至2025-12，30万元，在研，主持

• 国家重点研发计划子课题，基于集成生物光电子技术的单分子测序的关键技术，2022至2025，34.5万元，在研，主持

荣誉奖励

• 2018 国家级青年人才计划

代表性论文专著

Journal PUblications (Chronological order)

1. X. Zhao, A. Vardy, J. A. del Alamo, “Fin-Width Scaling of Highly-doped InGaAs Fins”, IEEE Transactions of Electron Devices, vol. 66, no. 6, pp. 2563-2568, May. 2019.

2. X. Zhao, A. Vardy, and J. A. del Alamo, “Excess OFF-State Current in InGaAs FinFETs: Physics of the Parasitic Bipolar Effect”, IEEE Transactions of Electron Devices, vol. 66, no. 5, pp. 2113-2118, Mar. 2019.

3. X. Zhao, C. Heidelberger, E. A. Fitzgerald, W. Lu, A. Vardy, and J. A. del Alamo, “Sub-10 nm Diameter InGaAs Vertical Nanowire MOSFETs: Ni vs. Mo contacts”, IEEE Transactions of Electron Devices, vol. 65, no. 9, pp. 3762-3768, Sep. 2018.

4. X. Zhao, W. Lu, A. Vardi and J. A. del Alamo, “Shrinking the Vertical Nanowire MOSFET”, Compound Semiconductor Magazine, vol. 24, no. 4, pp. 52-57, June. 2018.

5. X. Zhao, A. Vardy, and J. A. del Alamo, “Excess Off-State Current in InGaAs FinFETs”, IEEE Electron Device Letters, vol. 39, no. 4, pp.476-479, April. 2018.

6. A. Vardi, J. Lin, W. Lu, X. Zhao, A. Fernando-Saavedra, and J. A. del Alamo, “A Si-Compatible Fabrication Process for Scaled Self-Aligned InGaAs FinFETs,” IEEE Transactions on Semiconductor Engineering, vol. 30, no. 4, pp. 468-474.

7. X. Zhao, A. Vardy, J. A. del Alamo, “Sub-thermal Subthreshold Characteristics in Top-down InGaAs/InAs Heterojunction Vertical Nanowire Tunnel FETs”, IEEE Electron Device Letters, vol. 38, no. 7, pp.855-858, July. 2017.

8. X. Zhao, C. Heidelberger, E. A. Fitzgerald and J. A. del Alamo, “Source/Drain Asymmetry in InGaAs Vertical Nanowire MOSFETs”, IEEE Transactions of Electron Devices, vol. 64, no. 5, pp. 2161-2165, May 2017.

9. W. Lu, X. Zhao, D. Choi, S. E. Kazzi, J. A. del Alamo, “Alcohol-Based Digital Etch for III–V Vertical Nanowires With Sub-10 nm Diameter”, IEEE Electron Device Letters. vol. 38, no. 5, pp.548-551, May. 2017.

10. J. A. del Alamo, A. Vardi and X. Zhao, “InGaAs finFETs for Future CMOS”, Compound Semiconductor Magzine, vol. 22, no. 6, pp. 19-25, Aug. 2017.

11. J. A. del Alamo, D. A. Antoniadis, J. Lin, W. Lu, A. Vardi and X. Zhao, “Nanometer-Scale III-V MOSFETs,” IEEE Journal of the Electron Devices Society, vol. 4, no. 5, pp. 205-214, Jul. 2016.

12. H. Chong, X. Jia, L. Wei, S-C. Tan, X. Zhao, J. Joannopoulos, and Y. Fink, “Crystalline Silicon Core Fibres from Aluminum Core Performs”, Nature Communication, vol. 6, Feb.2015.

13. A. Vardi, W. Lu, X. Zhao, J. A. del Alamo, “Nano-scale Mo Ohmic Contacts to III-V Fins”, IEEE Electron Device Letters. vol. 36, no. 2, pp.126-128, Feb. 2015.

14. X. Zhao, J. A. del Alamo, “Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs”, IEEE Electron Device Letters, vol. 35, no. 5, pp. 521-523, May. 2014.

15. J. Lin, X. Zhao, D. A. Antoniadis, and J. A. del Alamo, “A Novel Digital Etch Technique for Deeply Scaled III-V MOSFETs”, IEEE Electron Device Letters, vol. 35, no. 4, pp. 440-442, Apr. 2014.

16. S. Xu, Y. Yang, D. Pei, X. Zhao, Y. Wnag, W. Sun, B. Ma, Y. Li, S. Xie, L.-M. Peng, “A Waveguide-Like Effect Observed in Multiwalled Carbon Nanotube Bundles,” Advanced Functional Materials, vol. 20, no. 14, pp. 2263-2268, Jun. 2010.

Conference Proceedings (Chronological order)

1. J. A. del Alamo, X. Cai, W. Lu, A. Vardi and X. Zhao, “III-V CMOS: Quo Vadis?” Invited Talk at Compound Semiconductor Week, Cambridge, US, May 29 – June 1, 2018.

2. J. A. del Alamo, X. Cai, W. Lu, A. Vardi and X. Zhao, “III-V CMOS: Quo Vadis?” Invited Talk at Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2018), Granada, Spain, March 19-21, 2018.

3. X. Zhao, C. Heidelberger, E. A. Fitzgerald W. Lu, A. Vardi and J. A. del Alamo, “Sub-10 nm InGaAs Vertical Nanowire MOSFETs”, in IEDM Tech. Dig., 2017, pp. 413-416.

4. A. Vardi, L. Kong, W. Lu, X. Cai, X. Zhao, J. Grajal and J. A. del Alamo, “Self-Aligned InGaAs FinFETs with 5-nm Fin-Width and 5-nm Gate-Contact Separation”, in IEDM Tech. Dig., 2017, pp. 429-432.

5. J. A. del Alamo, X. Zhao, W. Lu, and A. Vardi, “Towards Sub-10 nm Diameter InGaAs Vertical Nanowire MOSFETs and TFETs.” Invited Talk at 2017 5th Berkeley Symposium on Energy Efficient Electronic Systems,, Berkeley, CA, October 19-20, 2017.

6. J. A. del Alamo, X. Cai, J. Lin, W. Lu, A. Vardi, and X. Zhao, “CMOS Beyond Si: Nanometer-Scale III-V MOSFETs” Invited Talk at 31st Annual IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Miami, FL, October 19-21, 2017, pp. 25-29.

7. X. Zhao, C. Heidelberger, E. A. Fitzgerald and J. A. del Alamo, “Top-down InGaAs Vertical Nanowire MOSFETs with Record Characteristics”, Compound Semiconductor Week, Berlin, Germany, May 14-18, 2017.

8. A. Vardi, J. Lin, W. Lin, X. Zhao, J. A. del Alamo “High Aspect Ratio InGaAs FinFETs with Sub-20 nm Fin Width,” in VLSI Tech. Dig., 2016, pp. 1-2.

9. Vardi, X. Zhao, J. A. del Alamo, “Quantum-Size Effects in Sub 10-nm Fin Width InGaAs FinFETs”, in IEDM Tech. Dig., 2015, pp. 807-810.

10. T. P. Xiao, X. Zhao, S. Agarwal, E. Yablonovitch, “Impact of Interface Defects on Tunneling FET Turn-on Steepness”, 2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, Berkeley, CA, Oct, 2015.

11. J. A. del Alamo, D. A. Antoniadis, J. Lin, W. Lu, A. Vardi and X. Zhao, “III-V MOSFETs for future CMOS”, Invited Paper at IEEE Compound Semicoductor Symposium, New Orleans, LA, Oct, 2015.

12. X. Zhao, A. Vardy, J. A. del Alamo, “InGaAs/InAs Heterojunction Vertical Nanowire Tunnel FETs Fabricated by a Top-down Approach”, in IEDM Tech. Dig., 2014, pp. 590-593.

13. Vardi, X. Zhao and J. A. del Alamo, “InGaAs Double-Gate Fin-Sidewall MOSFET”, in Proc. 72nd Annu. Device Res. Conf., June. 2014, pp. 219-220.

14. X. Zhao, J. Lin, C. Heidelberger, E. A. Fitzgerald and J. A. del Alamo, “Vertical Nanowire InGaAs MOSFETs Fabricated by a Top-down Approach”, in IEDM Tech. Dig., 2013, pp. 695-698.

15. J. Lin, X. Zhao, T. Yu, D. A. Antoniadis, and J. A. del Alamo, “A New Self-aligned Quantum-Well MOSFET Architecture Fabricated by a Scalable Tight Pitch Process”, in IEDM Tech. Dig., 2013, pp. 757-760.

16. J. A. del Alamo, D. Antoniadis, A. Guo, D.-H. Kim, T.-W. Kim, J. Lin, W. Lu, A. Vardi, and X. Zhao, “InGaAs MOSFETs for CMOS: Recent Advances in Process Technology”, in IEDM Tech. Dig., 2013, pp. 24-27.